IXFV110N10PS
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- Mfr.Part #
- IXFV110N10PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A PLUS220SMD
- Stock
- 15,129
- In Stock ：
- 15,129
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3550pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Reach Compliance Code :
- Compliant
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 25ns
- Number of Pins :
- 220
- Package :
- Box
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 110A
- Published :
- 2006
- Terminal Form :
- Gull wing
- Threshold Voltage :
- 5V
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 500mA, 10V
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 65 ns
- Drain-source On Resistance-Max :
- 0.015Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- REACH SVHC :
- No SVHC
- Manufacturer :
- IXYS Corporation
- DS Breakdown Voltage-Min :
- 100 V
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Obsolete
- Power Dissipation-Max :
- 480W Tc
- Package / Case :
- PLUS-220SMD
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 480W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXFV110
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Fall Time (Typ) :
- 25 ns
- Series :
- PolarHT™ HiPerFET™
- Mount :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 100V
- Number of Terminals :
- 2
- Supplier Device Package :
- PLUS-220SMD
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Power Dissipation :
- 480W
- Pin Count :
- 3
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Mounting Type :
- Surface Mount
- Datasheets
- IXFV110N10PS
N-Channel Bulk 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V PLUS-220SMD
IXFV110N10PS Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3550pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 110A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 65 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.Normal operation requires that the DS breakdown voltage remain above 100 V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFV110N10PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXFV110N10PS Applications
There are a lot of IXYS
IXFV110N10PS applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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