IXFV12N90P

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Mfr.Part #
IXFV12N90P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 900V 12A PLUS220
Stock
34,691
In Stock :
34,691

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Number of Terminations :
3
Mounting Type :
Through Hole
Drain-source On Resistance-Max :
0.9Ohm
Terminal Position :
Single
RoHS :
Compliant
Qualification Status :
Not Qualified
Number of Elements :
1
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Transistor Application :
SWITCHING
Mount :
Through Hole
Continuous Drain Current (ID) :
12A
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
900m Ω @ 6A, 10V
Min Operating Temperature :
-55 °C
Additional Feature :
AVALANCHE RATED
Drain to Source Resistance :
900 mΩ
JESD-30 Code :
R-PSIP-T3
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature :
150 °C
Transistor Element Material :
SILICON
FET Feature :
--
Input Capacitance :
3.08 nF
Power Dissipation (Max) :
380W (Tc)
Pulsed Drain Current-Max (IDM) :
24A
Drain to Source Voltage (Vdss) :
900V
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Number of Terminals :
3
Base Product Number :
IXFV12
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
900 V
Product Status :
Obsolete
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
500 mJ
Pin Count :
3
Element Configuration :
Single
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
3080pF @ 25V
Supplier Device Package :
PLUS220
Case Connection :
DRAIN
Package / Case :
TO-220-3, Short Tab
Rds On Max :
900 mΩ
Series :
HiPerFET™, PolarP2™
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
Max Power Dissipation :
380 W
Manufacturer :
IXYS Corporation
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
380W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
900V
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
RoHS Status :
RoHS Compliant
Number of Pins :
220
Published :
2008
Power Dissipation :
380W
Datasheets
IXFV12N90P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV12N90P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Short Tab, Number of Pins:220, IXFV12N90P pinout, IXFV12N90P datasheet PDF, IXFV12N90P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV12N90P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFV12N90P


N-Channel Tube 900m Ω @ 6A, 10V ±30V 3080pF @ 25V 56nC @ 10V 900V TO-220-3, Short Tab

IXFV12N90P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3080pF @ 25V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.MOSFETs have 900 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 900 V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFV12N90P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 900V voltage
based on its rated peak drain current 24A.
single MOSFETs transistor is 900 mΩ
a 900V drain to source voltage (Vdss)


IXFV12N90P Applications


There are a lot of IXYS
IXFV12N90P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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