IXFV12N90P
- Mfr.Part #
- IXFV12N90P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 12A PLUS220
- Stock
- 34,691
- In Stock :
- 34,691
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.9Ohm
- Terminal Position :
- Single
- RoHS :
- Compliant
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 12A
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 6A, 10V
- Min Operating Temperature :
- -55 °C
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Resistance :
- 900 mΩ
- JESD-30 Code :
- R-PSIP-T3
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Operating Temperature :
- 150 °C
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Input Capacitance :
- 3.08 nF
- Power Dissipation (Max) :
- 380W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 24A
- Drain to Source Voltage (Vdss) :
- 900V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Base Product Number :
- IXFV12
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 900 V
- Product Status :
- Obsolete
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Pin Count :
- 3
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3080pF @ 25V
- Supplier Device Package :
- PLUS220
- Case Connection :
- DRAIN
- Package / Case :
- TO-220-3, Short Tab
- Rds On Max :
- 900 mΩ
- Series :
- HiPerFET™, PolarP2™
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Tube
- Max Power Dissipation :
- 380 W
- Manufacturer :
- IXYS Corporation
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 380W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 900V
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 220
- Published :
- 2008
- Power Dissipation :
- 380W
- Datasheets
- IXFV12N90P

N-Channel Tube 900m Ω @ 6A, 10V ±30V 3080pF @ 25V 56nC @ 10V 900V TO-220-3, Short Tab
IXFV12N90P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3080pF @ 25V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.MOSFETs have 900 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 900 V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFV12N90P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 900V voltage
based on its rated peak drain current 24A.
single MOSFETs transistor is 900 mΩ
a 900V drain to source voltage (Vdss)
IXFV12N90P Applications
There are a lot of IXYS
IXFV12N90P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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