IXFV16N80P
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- Mfr.Part #
- IXFV16N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 16A PLUS220
- Stock
- 2,959
- In Stock ：
- 2,959
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 500mA, 10V
- Power Dissipation :
- 460W
- Fall Time (Typ) :
- 29 ns
- Base Product Number :
- IXFV16
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™, PolarHT™
- Power Dissipation-Max :
- 460W Tc
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 16A
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation (Max) :
- 460W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- PLUS220
- Product Status :
- Active
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- JESD-30 Code :
- R-PSIP-T3
- Drain-source On Resistance-Max :
- 0.6Ohm
- Manufacturer :
- IXYS Corporation
- Drain to Source Breakdown Voltage :
- 800V
- JESD-609 Code :
- e1
- Published :
- 2006
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 800 V
- Rise Time :
- 32ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3, Short Tab
- Number of Pins :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Pin Count :
- 3
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Gate to Source Voltage (Vgs) :
- 30V
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 75 ns
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 800V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Number of Elements :
- 1
- Datasheets
- IXFV16N80P
N-Channel Tube 600m Ω @ 500mA, 10V ±30V 4600pF @ 25V 71nC @ 10V 800V TO-220-3, Short Tab
IXFV16N80P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4600pF @ 25V.This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFV16N80P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
a 800V drain to source voltage (Vdss)
IXFV16N80P Applications
There are a lot of IXYS
IXFV16N80P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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