IXFV15N100PS
- Mfr.Part #
- IXFV15N100PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 15A PLUS220SMD
- Stock
- 7,715
- In Stock :
- 7,715
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 543 W
- Drain-source On Resistance-Max :
- 0.76Ohm
- Surface Mount :
- yes
- Packaging :
- Tube
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- PLUS-220SMD
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Package :
- Tube
- Series :
- HiPerFET™, PolarP2™
- Base Product Number :
- IXFV15
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 44ns
- JESD-30 Code :
- R-PSSO-G2
- Reach Compliance Code :
- Compliant
- Manufacturer :
- IXYS Corporation
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 1000V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2008
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 58 ns
- Turn-Off Delay Time :
- 44 ns
- Number of Terminals :
- 2
- Drain to Source Breakdown Voltage :
- 1kV
- Package / Case :
- PLUS-220SMD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Power Dissipation :
- 543W
- Pulsed Drain Current-Max (IDM) :
- 40A
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5140pF @ 25V
- Power Dissipation-Max :
- 543W Tc
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 1000 V
- Drain Current-Max (Abs) (ID) :
- 15 A
- Rds On (Max) @ Id, Vgs :
- 760m Ω @ 500mA, 10V
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 97nC @ 10V
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Continuous Drain Current (ID) :
- 15A
- Power Dissipation (Max) :
- 543W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Datasheets
- IXFV15N100PS
N-Channel Tube 760m Ω @ 500mA, 10V ±30V 5140pF @ 25V 97nC @ 10V 1000V PLUS-220SMD
IXFV15N100PS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.A device's maximum input capacitance is 5140pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 15 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 44 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFV15N100PS Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
a 1000V drain to source voltage (Vdss)
IXFV15N100PS Applications
There are a lot of IXYS
IXFV15N100PS applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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