IXFV15N100PS

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Mfr.Part #
IXFV15N100PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 1000V 15A PLUS220SMD
Stock
7,715
In Stock :
7,715

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max (Abs) :
543 W
Drain-source On Resistance-Max :
0.76Ohm
Surface Mount :
yes
Packaging :
Tube
Pin Count :
3
Gate to Source Voltage (Vgs) :
30V
Package Shape :
RECTANGULAR
Supplier Device Package :
PLUS-220SMD
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
FET Feature :
--
Package :
Tube
Series :
HiPerFET™, PolarP2™
Base Product Number :
IXFV15
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
44ns
JESD-30 Code :
R-PSSO-G2
Reach Compliance Code :
Compliant
Manufacturer :
IXYS Corporation
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Transistor Application :
SWITCHING
Vgs (Max) :
±30V
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
1000V
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2008
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Fall Time (Typ) :
58 ns
Turn-Off Delay Time :
44 ns
Number of Terminals :
2
Drain to Source Breakdown Voltage :
1kV
Package / Case :
PLUS-220SMD
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Power Dissipation :
543W
Pulsed Drain Current-Max (IDM) :
40A
Polarity/Channel Type :
N-Channel
Product Status :
Obsolete
Pbfree Code :
yes
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
5140pF @ 25V
Power Dissipation-Max :
543W Tc
RoHS Status :
RoHS Compliant
Additional Feature :
AVALANCHE RATED
DS Breakdown Voltage-Min :
1000 V
Drain Current-Max (Abs) (ID) :
15 A
Rds On (Max) @ Id, Vgs :
760m Ω @ 500mA, 10V
Qualification Status :
Not Qualified
Configuration :
SINGLE WITH BUILT-IN DIODE
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
97nC @ 10V
Avalanche Energy Rating (Eas) :
500 mJ
Continuous Drain Current (ID) :
15A
Power Dissipation (Max) :
543W (Tc)
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Number of Terminations :
2
Datasheets
IXFV15N100PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV15N100PS from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:PLUS-220SMD, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:2, IXFV15N100PS pinout, IXFV15N100PS datasheet PDF, IXFV15N100PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV15N100PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 760m Ω @ 500mA, 10V ±30V 5140pF @ 25V 97nC @ 10V 1000V PLUS-220SMD

IXFV15N100PS Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.A device's maximum input capacitance is 5140pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 15 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 44 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFV15N100PS Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
a 1000V drain to source voltage (Vdss)


IXFV15N100PS Applications


There are a lot of IXYS
IXFV15N100PS applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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