IXFV18N60P
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- Mfr.Part #
- IXFV18N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 18A PLUS220
- Stock
- 22,925
- In Stock ：
- 22,925
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 30V
- Manufacturer :
- IXYS Corporation
- Package :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Voltage - Rated DC :
- 600V
- Power Dissipation (Max) :
- 360W (Tc)
- Turn-Off Delay Time :
- 62 ns
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Power Dissipation-Max :
- 360W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Surface Mount :
- No
- Power Dissipation :
- 360W
- Continuous Drain Current (ID) :
- 18A
- JESD-30 Code :
- R-PSIP-T3
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 600V
- Supplier Device Package :
- PLUS220
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Current Rating :
- 18A
- Number of Elements :
- 1
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 600V
- Case Connection :
- DRAIN
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Package / Case :
- TO-220-3, Short Tab
- Number of Terminals :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 500mA, 10V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.4Ohm
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 45A
- DS Breakdown Voltage-Min :
- 600 V
- Rise Time :
- 22ns
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Base Product Number :
- IXFV18
- Series :
- HiPerFET™, PolarHT™
- Fall Time (Typ) :
- 22 ns
- Product Status :
- Obsolete
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Published :
- 2006
- Datasheets
- IXFV18N60P
IXFV18N60P Documents
N-Channel Tube 400m Ω @ 500mA, 10V ±30V 2500pF @ 25V 50nC @ 10V 600V TO-220-3, Short Tab
IXFV18N60P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 2500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 62 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 45A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFV18N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 45A.
a 600V drain to source voltage (Vdss)
IXFV18N60P Applications
There are a lot of IXYS
IXFV18N60P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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