IXFV18N60P
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- Mfr.Part #
- IXFV18N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 18A PLUS220
- Stock
- 22,925
- In Stock ：
- 22,925
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFV18
- Vgs (Max) :
- ±30V
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Fall Time (Typ) :
- 22 ns
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Current Rating :
- 18A
- FET Type :
- N-Channel
- Package :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Power Dissipation :
- 360W
- Number of Terminals :
- 3
- Power Dissipation-Max :
- 360W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 18A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSIP-T3
- FET Feature :
- --
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- PLUS220
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS Corporation
- Package / Case :
- TO-220-3, Short Tab
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 45A
- Power Dissipation (Max) :
- 360W (Tc)
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 500mA, 10V
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 600V
- Drain-source On Resistance-Max :
- 0.4Ohm
- Terminal Position :
- Single
- Series :
- HiPerFET™, PolarHT™
- JESD-609 Code :
- e1
- Turn-Off Delay Time :
- 62 ns
- DS Breakdown Voltage-Min :
- 600 V
- Drain to Source Voltage (Vdss) :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 600V
- Number of Terminations :
- 3
- Published :
- 2006
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 22ns
- Product Status :
- Obsolete
- Mount :
- Through Hole
- Datasheets
- IXFV18N60P
N-Channel Tube 400m Ω @ 500mA, 10V ±30V 2500pF @ 25V 50nC @ 10V 600V TO-220-3, Short Tab
IXFV18N60P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 2500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 62 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 45A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFV18N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 45A.
a 600V drain to source voltage (Vdss)
IXFV18N60P Applications
There are a lot of IXYS
IXFV18N60P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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