IXFV12N80PS

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Mfr.Part #
IXFV12N80PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 800V 12A PLUS-220SMD
Stock
41,804
In Stock :
41,804

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Package / Case :
PLUS-220SMD
Terminal Form :
Gull wing
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Max Operating Temperature :
150 °C
Pulsed Drain Current-Max (IDM) :
36A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
360 W
Published :
2006
Drain-source On Resistance-Max :
0.85Ohm
REACH SVHC :
No SVHC
Input Capacitance :
2.8 nF
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
800V
Reverse Recovery Time :
250 ns
Packaging :
Tube
Surface Mount :
yes
Fall Time (Typ) :
25 ns
Element Configuration :
Single
Rds On Max :
850 mΩ
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Rise Time :
26ns
FET Type :
N-Channel
Nominal Vgs :
5 V
DS Breakdown Voltage-Min :
800 V
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Min Operating Temperature :
-55 °C
Terminal Position :
Single
Power Dissipation (Max) :
360W (Tc)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Drain to Source Resistance :
850 mΩ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
12A
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 25V
Package :
Tube
Threshold Voltage :
5V
Termination :
SMD/SMT
Number of Terminals :
2
JESD-30 Code :
R-PSSO-G2
Current - Continuous Drain (Id) @ 25°C :
12A Tc
RoHS :
Compliant
Power Dissipation :
360W
Supplier Device Package :
PLUS-220SMD
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Series :
HiPerFET™, PolarHT™
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Dual Supply Voltage :
800V
Avalanche Energy Rating (Eas) :
800 mJ
Power Dissipation-Max :
360W Tc
Turn-Off Delay Time :
70 ns
Reach Compliance Code :
Compliant
Manufacturer :
IXYS Corporation
Qualification Status :
Not Qualified
Vgs (Max) :
±30V
Mount :
Surface Mount
Base Product Number :
IXFV12
Number of Terminations :
2
Transistor Application :
SWITCHING
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Number of Pins :
220
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e1
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
850m Ω @ 500mA, 10V
Drain to Source Voltage (Vdss) :
800V
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Status :
Obsolete
Number of Elements :
1
Datasheets
IXFV12N80PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV12N80PS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PLUS-220SMD, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:220, Operating Temperature:-55°C~150°C TJ, IXFV12N80PS pinout, IXFV12N80PS datasheet PDF, IXFV12N80PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV12N80PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 850m Ω @ 500mA, 10V ±30V 2800pF @ 25V 51nC @ 10V 800V PLUS-220SMD

IXFV12N80PS Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 800 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2800pF @ 25V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 36A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 850 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFV12N80PS Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 36A.
single MOSFETs transistor is 850 mΩ
a threshold voltage of 5V
a 800V drain to source voltage (Vdss)


IXFV12N80PS Applications


There are a lot of IXYS
IXFV12N80PS applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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