IXFV18N60PS

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Mfr.Part #
IXFV18N60PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 600V 18A PLUS-220SMD
Stock
3,559
In Stock :
3,559

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
PLUS-220SMD
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Number of Terminals :
2
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Obsolete
Threshold Voltage :
5.5V
Turn-Off Delay Time :
62 ns
Rise Time :
22ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFV18
DS Breakdown Voltage-Min :
600 V
Lead Free :
Lead Free
Terminal Position :
Single
Power Dissipation :
360W
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.4Ohm
Operating Temperature :
-55°C~150°C TJ
Published :
2006
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Number of Pins :
220
Series :
HiPerFET™, PolarHT™
Voltage - Rated DC :
600V
ECCN Code :
EAR99
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
360W (Tc)
Terminal Form :
Gull wing
Pbfree Code :
yes
Number of Terminations :
2
Continuous Drain Current (ID) :
18A
Pulsed Drain Current-Max (IDM) :
45A
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
400m Ω @ 500mA, 10V
Power Dissipation-Max :
360W Tc
Manufacturer :
IXYS Corporation
FET Feature :
--
Dual Supply Voltage :
600V
Transistor Element Material :
SILICON
Packaging :
Tube
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Reverse Recovery Time :
200 ns
Fall Time (Typ) :
22 ns
Vgs (Max) :
±30V
Avalanche Energy Rating (Eas) :
1000 mJ
Drain to Source Breakdown Voltage :
600V
Surface Mount :
yes
Element Configuration :
Single
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Supplier Device Package :
PLUS-220SMD
Configuration :
SINGLE WITH BUILT-IN DIODE
Nominal Vgs :
5.5 V
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current Rating :
18A
Termination :
SMD/SMT
JESD-30 Code :
R-PSSO-G2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV18N60PS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PLUS-220SMD, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:220, Number of Terminations:2, IXFV18N60PS pinout, IXFV18N60PS datasheet PDF, IXFV18N60PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV18N60PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 400m Ω @ 500mA, 10V ±30V 2500pF @ 25V 50nC @ 10V 600V PLUS-220SMD

IXFV18N60PS Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 45A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5.5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFV18N60PS Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 45A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXFV18N60PS Applications


There are a lot of IXYS
IXFV18N60PS applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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