IXFV18N60PS
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- Mfr.Part #
- IXFV18N60PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 18A PLUS-220SMD
- Stock
- 3,559
- In Stock ：
- 3,559
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- PLUS-220SMD
- Drain to Source Voltage (Vdss) :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Number of Terminals :
- 2
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Obsolete
- Threshold Voltage :
- 5.5V
- Turn-Off Delay Time :
- 62 ns
- Rise Time :
- 22ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFV18
- DS Breakdown Voltage-Min :
- 600 V
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Power Dissipation :
- 360W
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.4Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Number of Pins :
- 220
- Series :
- HiPerFET™, PolarHT™
- Voltage - Rated DC :
- 600V
- ECCN Code :
- EAR99
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 360W (Tc)
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 18A
- Pulsed Drain Current-Max (IDM) :
- 45A
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 500mA, 10V
- Power Dissipation-Max :
- 360W Tc
- Manufacturer :
- IXYS Corporation
- FET Feature :
- --
- Dual Supply Voltage :
- 600V
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Reverse Recovery Time :
- 200 ns
- Fall Time (Typ) :
- 22 ns
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drain to Source Breakdown Voltage :
- 600V
- Surface Mount :
- yes
- Element Configuration :
- Single
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Supplier Device Package :
- PLUS-220SMD
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Nominal Vgs :
- 5.5 V
- Package :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current Rating :
- 18A
- Termination :
- SMD/SMT
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- IXFV18N60PS
IXFV18N60PS Documents
N-Channel Tube 400m Ω @ 500mA, 10V ±30V 2500pF @ 25V 50nC @ 10V 600V PLUS-220SMD
IXFV18N60PS Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 45A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5.5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFV18N60PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 45A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)
IXFV18N60PS Applications
There are a lot of IXYS
IXFV18N60PS applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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