IXFV18N60PS

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Mfr.Part #
IXFV18N60PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 600V 18A PLUS-220SMD
Stock
3,559
In Stock :
3,559

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Obsolete
Transistor Application :
SWITCHING
Turn-Off Delay Time :
62 ns
Number of Terminals :
2
Termination :
SMD/SMT
Avalanche Energy Rating (Eas) :
1000 mJ
Drain-source On Resistance-Max :
0.4Ohm
Power Dissipation :
360W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2006
Power Dissipation-Max :
360W Tc
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
JESD-30 Code :
R-PSSO-G2
Threshold Voltage :
5.5V
Reverse Recovery Time :
200 ns
Mount :
Surface Mount
Voltage - Rated DC :
600V
Fall Time (Typ) :
22 ns
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Additional Feature :
AVALANCHE RATED
Number of Pins :
220
Package / Case :
PLUS-220SMD
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
600V
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Compliant
Surface Mount :
yes
Lead Free :
Lead Free
Current Rating :
18A
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Pbfree Code :
yes
Series :
HiPerFET™, PolarHT™
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
REACH SVHC :
No SVHC
Current - Continuous Drain (Id) @ 25°C :
18A Tc
ECCN Code :
EAR99
Packaging :
Tube
Manufacturer :
IXYS Corporation
Terminal Form :
Gull wing
Supplier Device Package :
PLUS-220SMD
Base Product Number :
IXFV18
Package Shape :
RECTANGULAR
Number of Terminations :
2
Pin Count :
3
Number of Elements :
1
Gate to Source Voltage (Vgs) :
30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
600V
Nominal Vgs :
5.5 V
Power Dissipation (Max) :
360W (Tc)
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
400m Ω @ 500mA, 10V
DS Breakdown Voltage-Min :
600 V
Package :
Tube
Element Configuration :
Single
Continuous Drain Current (ID) :
18A
Pulsed Drain Current-Max (IDM) :
45A
RoHS Status :
RoHS Compliant
Terminal Position :
Single
Vgs (Max) :
±30V
Dual Supply Voltage :
600V
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Rise Time :
22ns
FET Type :
N-Channel
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV18N60PS from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:220, Package / Case:PLUS-220SMD, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, IXFV18N60PS pinout, IXFV18N60PS datasheet PDF, IXFV18N60PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV18N60PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 400m Ω @ 500mA, 10V ±30V 2500pF @ 25V 50nC @ 10V 600V PLUS-220SMD

IXFV18N60PS Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 45A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5.5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFV18N60PS Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 45A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXFV18N60PS Applications


There are a lot of IXYS
IXFV18N60PS applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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