IXFV96N15PS

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Max Power Dissipation :

480 W

Terminal Position :

Single

FET Feature :

--

Drain to Source Voltage (Vdss) :

150V

Power Dissipation (Max) :

480W (Tc)

Base Product Number :

IXFV96

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.024Ohm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

RoHS :

Compliant

Power Dissipation-Max :

480W Tc

DS Breakdown Voltage-Min :

150 V

Gate to Source Voltage (Vgs) :

20V

Product Status :

Obsolete

Number of Terminals :

2

Additional Feature :

AVALANCHE ENERGY RATED

Manufacturer :

IXYS Corporation

Mount :

Surface Mount

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

150V

Number of Terminations :

2

Fall Time (Typ) :

18 ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 4mA

Supplier Device Package :

PLUS-220SMD

Max Operating Temperature :

175 °C

Published :

2006

Continuous Drain Current (ID) :

96A

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Pin Count :

3

Package :

Box

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Turn-Off Delay Time :

66 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Packaging :

Bulk

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance :

3.5 nF

Rds On (Max) @ Id, Vgs :

24m Ω @ 500mA, 10V

Package / Case :

PLUS-220SMD

Pulsed Drain Current-Max (IDM) :

250A

Rds On Max :

24 mΩ

Avalanche Energy Rating (Eas) :

1000 mJ

Rise Time :

33ns

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-55 °C

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Drain to Source Resistance :

24 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Transistor Element Material :

SILICON

Power Dissipation :

480W

Pbfree Code :

yes

Series :

PolarHT™ HiPerFET™

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

96A Tc