IXFV96N15P

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Mfr.Part #
IXFV96N15P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 150V 96A PLUS220
Stock
19,787
In Stock :
19,787

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
250A
Number of Terminals :
3
Mount :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5V @ 4mA
Product Status :
Obsolete
JESD-30 Code :
R-PSIP-T3
Avalanche Energy Rating (Eas) :
1000 mJ
Drain-source On Resistance-Max :
0.024Ohm
JESD-609 Code :
e1
Package :
Box
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Number of Pins :
3
Base Product Number :
IXFV96
Series :
PolarHT™ HiPerFET™
Mounting Type :
Through Hole
Manufacturer :
IXYS Corporation
Additional Feature :
AVALANCHE ENERGY RATED
Power Dissipation :
480W
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
24m Ω @ 500mA, 10V
Drain to Source Breakdown Voltage :
150V
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 25V
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~175°C TJ
Surface Mount :
No
Rise Time :
33ns
Supplier Device Package :
PLUS220
Fall Time (Typ) :
18 ns
Drain to Source Voltage (Vdss) :
150V
Packaging :
Bulk
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Published :
2006
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code :
EAR99
Element Configuration :
Single
FET Type :
N-Channel
Pin Count :
3
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Number of Elements :
1
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
480W (Tc)
Terminal Form :
THROUGH-HOLE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Compliant
Package / Case :
TO-220-3, Short Tab
FET Feature :
--
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
Power Dissipation-Max :
480W Tc
Continuous Drain Current (ID) :
96A
DS Breakdown Voltage-Min :
150 V
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
66 ns
Datasheets
IXFV96N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV96N15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Short Tab, IXFV96N15P pinout, IXFV96N15P datasheet PDF, IXFV96N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV96N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFV96N15P


N-Channel Bulk 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150V TO-220-3, Short Tab

IXFV96N15P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 96A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 66 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 150 V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFV96N15P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)


IXFV96N15P Applications


There are a lot of IXYS
IXFV96N15P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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