IXFV96N15P
- Mfr.Part #
- IXFV96N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 96A PLUS220
- Stock
- 19,787
- In Stock :
- 19,787
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 250A
- Number of Terminals :
- 3
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Product Status :
- Obsolete
- JESD-30 Code :
- R-PSIP-T3
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drain-source On Resistance-Max :
- 0.024Ohm
- JESD-609 Code :
- e1
- Package :
- Box
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Number of Pins :
- 3
- Base Product Number :
- IXFV96
- Series :
- PolarHT™ HiPerFET™
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS Corporation
- Additional Feature :
- AVALANCHE ENERGY RATED
- Power Dissipation :
- 480W
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 500mA, 10V
- Drain to Source Breakdown Voltage :
- 150V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 25V
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- No
- Rise Time :
- 33ns
- Supplier Device Package :
- PLUS220
- Fall Time (Typ) :
- 18 ns
- Drain to Source Voltage (Vdss) :
- 150V
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Published :
- 2006
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 480W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Compliant
- Package / Case :
- TO-220-3, Short Tab
- FET Feature :
- --
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 480W Tc
- Continuous Drain Current (ID) :
- 96A
- DS Breakdown Voltage-Min :
- 150 V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 66 ns
- Datasheets
- IXFV96N15P
N-Channel Bulk 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150V TO-220-3, Short Tab
IXFV96N15P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 96A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 66 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 150 V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFV96N15P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)
IXFV96N15P Applications
There are a lot of IXYS
IXFV96N15P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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