IXFV74N20PS
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- Mfr.Part #
- IXFV74N20PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 74A PLUS-220SMD
- Stock
- 8,978
- In Stock ：
- 8,978
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 200V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- DS Breakdown Voltage-Min :
- 200 V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Number of Terminations :
- 2
- Resistance :
- 34mOhm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 74 A
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 37A, 10V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Base Product Number :
- IXFV74
- Published :
- 2008
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Series :
- PolarHT™ HiPerFET™
- Continuous Drain Current (ID) :
- 74A
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 60 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Package / Case :
- PLUS-220SMD
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 480W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Box
- Pulsed Drain Current-Max (IDM) :
- 200A
- Drain to Source Breakdown Voltage :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 480 W
- Fall Time (Typ) :
- 21 ns
- Supplier Device Package :
- PLUS-220SMD
- ECCN Code :
- EAR99
- Manufacturer :
- IXYS Corporation
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Reach Compliance Code :
- Compliant
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Rise Time :
- 21ns
- Power Dissipation :
- 480W
- Power Dissipation-Max :
- 480W Tc
- Vgs (Max) :
- ±20V
- Product Status :
- Obsolete
- Drain-source On Resistance-Max :
- 0.034 Ω
- Datasheets
- IXFV74N20PS
N-Channel Bulk 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V PLUS-220SMD
IXFV74N20PS Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 74A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.A device can conduct a maximum continuous current of [74 A] according to its drain current.It is [60 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 200A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200 V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFV74N20PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)
IXFV74N20PS Applications
There are a lot of IXYS
IXFV74N20PS applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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