IXFV74N20P

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Mfr.Part #
IXFV74N20P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 200V 74A PLUS220
Stock
19,220
In Stock :
19,220

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-220-3, Short Tab
Pbfree Code :
yes
FET Type :
N-Channel
Package :
Box
Transistor Application :
SWITCHING
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXFV74
JESD-609 Code :
e1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
200 V
Continuous Drain Current (ID) :
74A
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Terminal Form :
THROUGH-HOLE
Series :
PolarHT™ HiPerFET™
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Power Dissipation (Max) :
480W (Tc)
Drain to Source Voltage (Vdss) :
200V
Number of Pins :
3
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
200V
ECCN Code :
EAR99
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 10V
Surface Mount :
No
JESD-30 Code :
R-PSIP-T3
Drain-source On Resistance-Max :
0.034 Ω
Number of Terminals :
3
Power Dissipation-Max (Abs) :
480 W
Manufacturer :
IXYS Corporation
Number of Terminations :
3
Fall Time (Typ) :
21 ns
FET Feature :
--
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Power Dissipation :
480W
Operating Temperature :
-55°C~175°C TJ
Product Status :
Obsolete
Vgs(th) (Max) @ Id :
5V @ 4mA
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
34m Ω @ 37A, 10V
Power Dissipation-Max :
480W Tc
Rise Time :
21ns
Drain Current-Max (Abs) (ID) :
74 A
Published :
2008
Current - Continuous Drain (Id) @ 25°C :
74A Tc
Package Shape :
RECTANGULAR
RoHS Status :
RoHS Compliant
Turn-Off Delay Time :
60 ns
Element Configuration :
Single
Number of Elements :
1
Supplier Device Package :
PLUS220
Pulsed Drain Current-Max (IDM) :
200A
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 25V
Packaging :
Bulk
Vgs (Max) :
±20V
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Datasheets
IXFV74N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV74N20P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Short Tab, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, IXFV74N20P pinout, IXFV74N20P datasheet PDF, IXFV74N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV74N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFV74N20P


N-Channel Bulk 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V TO-220-3, Short Tab

IXFV74N20P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 74A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 74 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 200A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFV74N20P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)


IXFV74N20P Applications


There are a lot of IXYS
IXFV74N20P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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