IXFV52N30PS

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Mfr.Part #
IXFV52N30PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 300V 52A PLUS-220SMD
Stock
11,860
In Stock :
11,860

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
2
Power Dissipation (Max) :
400W (Tc)
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Fall Time (Typ) :
20 ns
Terminal Position :
Single
Supplier Device Package :
PLUS-220SMD
Drain to Source Breakdown Voltage :
300V
ECCN Code :
EAR99
Min Operating Temperature :
-55 °C
Drain Current-Max (Abs) (ID) :
52 A
Avalanche Energy Rating (Eas) :
1000 mJ
Rise Time :
22ns
Package / Case :
PLUS-220SMD
Turn-Off Delay Time :
60 ns
Max Operating Temperature :
150 °C
FET Type :
N-Channel
Series :
PolarHT™ HiPerFET™
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
66m Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds :
3490pF @ 25V
RoHS :
Compliant
Number of Elements :
1
Base Product Number :
IXFV52
Continuous Drain Current (ID) :
52A
FET Feature :
--
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS Corporation
Power Dissipation-Max :
400W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.066Ohm
Vgs(th) (Max) @ Id :
5V @ 4mA
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
300V
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Package Shape :
RECTANGULAR
Terminal Form :
Gull wing
Number of Pins :
3
Number of Terminals :
2
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
400 W
RoHS Status :
RoHS Compliant
Polarity/Channel Type :
N-Channel
Drain to Source Resistance :
66 mΩ
Vgs (Max) :
±20V
Published :
2008
Surface Mount :
yes
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On Max :
66 mΩ
Configuration :
SINGLE WITH BUILT-IN DIODE
Pulsed Drain Current-Max (IDM) :
150A
Package :
Box
Product Status :
Obsolete
Element Configuration :
Single
DS Breakdown Voltage-Min :
300 V
Max Power Dissipation :
400 W
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Power Dissipation :
400W
Pin Count :
3
Input Capacitance :
3.49 nF
Datasheets
IXFV52N30PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV52N30PS from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:PLUS-220SMD, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFV52N30PS pinout, IXFV52N30PS datasheet PDF, IXFV52N30PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV52N30PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 66m Ω @ 500mA, 10V ±20V 3490pF @ 25V 110nC @ 10V 300V PLUS-220SMD

IXFV52N30PS Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3490pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 52A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 52 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 150A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 66 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFV52N30PS Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150A.
single MOSFETs transistor is 66 mΩ
a 300V drain to source voltage (Vdss)


IXFV52N30PS Applications


There are a lot of IXYS
IXFV52N30PS applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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