IXFV52N30PS
- Mfr.Part #
- IXFV52N30PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 52A PLUS-220SMD
- Stock
- 11,860
- In Stock :
- 11,860
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Power Dissipation (Max) :
- 400W (Tc)
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Fall Time (Typ) :
- 20 ns
- Terminal Position :
- Single
- Supplier Device Package :
- PLUS-220SMD
- Drain to Source Breakdown Voltage :
- 300V
- ECCN Code :
- EAR99
- Min Operating Temperature :
- -55 °C
- Drain Current-Max (Abs) (ID) :
- 52 A
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Rise Time :
- 22ns
- Package / Case :
- PLUS-220SMD
- Turn-Off Delay Time :
- 60 ns
- Max Operating Temperature :
- 150 °C
- FET Type :
- N-Channel
- Series :
- PolarHT™ HiPerFET™
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 66m Ω @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3490pF @ 25V
- RoHS :
- Compliant
- Number of Elements :
- 1
- Base Product Number :
- IXFV52
- Continuous Drain Current (ID) :
- 52A
- FET Feature :
- --
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max :
- 400W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.066Ohm
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 300V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Package Shape :
- RECTANGULAR
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Number of Terminals :
- 2
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max (Abs) :
- 400 W
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- N-Channel
- Drain to Source Resistance :
- 66 mΩ
- Vgs (Max) :
- ±20V
- Published :
- 2008
- Surface Mount :
- yes
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On Max :
- 66 mΩ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 150A
- Package :
- Box
- Product Status :
- Obsolete
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 300 V
- Max Power Dissipation :
- 400 W
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Power Dissipation :
- 400W
- Pin Count :
- 3
- Input Capacitance :
- 3.49 nF
- Datasheets
- IXFV52N30PS
N-Channel Tube 66m Ω @ 500mA, 10V ±20V 3490pF @ 25V 110nC @ 10V 300V PLUS-220SMD
IXFV52N30PS Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3490pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 52A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 52 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 150A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 66 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFV52N30PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150A.
single MOSFETs transistor is 66 mΩ
a 300V drain to source voltage (Vdss)
IXFV52N30PS Applications
There are a lot of IXYS
IXFV52N30PS applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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