IXFV52N30P
- Mfr.Part #
- IXFV52N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 52A PLUS220
- Stock
- 16,905
- In Stock :
- 16,905
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation (Max) :
- 400W (Tc)
- Number of Pins :
- 3
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- PolarHT™ HiPerFET™
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Published :
- 2008
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation :
- 400W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSIP-T3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 66m Ω @ 500mA, 10V
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 300 V
- Resistance :
- 66mOhm
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 150A
- Product Status :
- Obsolete
- Supplier Device Package :
- PLUS220
- Power Dissipation-Max (Abs) :
- 400 W
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXFV52
- Terminal Position :
- Single
- Package / Case :
- TO-220-3, Short Tab
- Drain-source On Resistance-Max :
- 0.066 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 3490pF @ 25V
- Drain to Source Voltage (Vdss) :
- 300V
- Drain Current-Max (Abs) (ID) :
- 52 A
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Pin Count :
- 3
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 52A
- Number of Terminals :
- 3
- Rise Time :
- 22ns
- Package :
- Tube
- Turn-Off Delay Time :
- 60 ns
- Fall Time (Typ) :
- 20 ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 400W Tc
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Drain to Source Breakdown Voltage :
- 300V
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Datasheets
- IXFV52N30P
N-Channel Tube 66m Ω @ 500mA, 10V ±20V 3490pF @ 25V 110nC @ 10V 300V TO-220-3, Short Tab
IXFV52N30P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3490pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 52A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 52 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 150A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFV52N30P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150A.
a 300V drain to source voltage (Vdss)
IXFV52N30P Applications
There are a lot of IXYS
IXFV52N30P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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