IXFV52N30P

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Mfr.Part #
IXFV52N30P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 300V 52A PLUS220
Stock
16,905
In Stock :
16,905

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Power Dissipation (Max) :
400W (Tc)
Number of Pins :
3
Mount :
Through Hole
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
PolarHT™ HiPerFET™
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Published :
2008
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
5V @ 4mA
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation :
400W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSIP-T3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
66m Ω @ 500mA, 10V
Additional Feature :
AVALANCHE RATED
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
300 V
Resistance :
66mOhm
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
150A
Product Status :
Obsolete
Supplier Device Package :
PLUS220
Power Dissipation-Max (Abs) :
400 W
Reach Compliance Code :
Compliant
Base Product Number :
IXFV52
Terminal Position :
Single
Package / Case :
TO-220-3, Short Tab
Drain-source On Resistance-Max :
0.066 Ω
Input Capacitance (Ciss) (Max) @ Vds :
3490pF @ 25V
Drain to Source Voltage (Vdss) :
300V
Drain Current-Max (Abs) (ID) :
52 A
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Number of Terminations :
3
Pin Count :
3
Packaging :
Tube
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
FET Feature :
--
Continuous Drain Current (ID) :
52A
Number of Terminals :
3
Rise Time :
22ns
Package :
Tube
Turn-Off Delay Time :
60 ns
Fall Time (Typ) :
20 ns
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e1
Power Dissipation-Max :
400W Tc
Avalanche Energy Rating (Eas) :
1000 mJ
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Drain to Source Breakdown Voltage :
300V
Lead Free :
Lead Free
Surface Mount :
No
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Datasheets
IXFV52N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV52N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Short Tab, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFV52N30P pinout, IXFV52N30P datasheet PDF, IXFV52N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV52N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFV52N30P


N-Channel Tube 66m Ω @ 500mA, 10V ±20V 3490pF @ 25V 110nC @ 10V 300V TO-220-3, Short Tab

IXFV52N30P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3490pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 52A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 52 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 150A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFV52N30P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150A.
a 300V drain to source voltage (Vdss)


IXFV52N30P Applications


There are a lot of IXYS
IXFV52N30P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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