IXFV36N50PS

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

36 A

Qualification Status :

Not Qualified

Supplier Device Package :

PLUS-220SMD

Vgs(th) (Max) @ Id :

5V @ 4mA

Power Dissipation-Max :

540W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Published :

2006

Current Rating :

36A

Series :

HiPerFET™, PolarP2™

Fall Time (Typ) :

21 ns

Manufacturer :

IXYS Corporation

Lead Free :

Lead Free

Threshold Voltage :

5V

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Transistor Application :

SWITCHING

Surface Mount :

yes

Reverse Recovery Time :

200 ns

Polarity/Channel Type :

N-Channel

Power Dissipation-Max (Abs) :

540 W

RoHS Status :

RoHS Compliant

Package :

Tube

Product Status :

Obsolete

Power Dissipation :

540W

Termination :

SMD/SMT

Number of Pins :

220

Package / Case :

PLUS-220SMD

Base Product Number :

IXFV36

Pin Count :

3

Nominal Vgs :

5 V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

500 V

Reach Compliance Code :

Compliant

Dual Supply Voltage :

500V

Avalanche Energy Rating (Eas) :

1500 mJ

Drain-source On Resistance-Max :

0.17Ohm

Number of Terminals :

2

REACH SVHC :

No SVHC

Mount :

Surface Mount

Voltage - Rated DC :

500V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

FET Feature :

--

Number of Terminations :

2

Turn-Off Delay Time :

75 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

36A

Case Connection :

DRAIN

Terminal Position :

Single

Drain to Source Breakdown Voltage :

500V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Vgs (Max) :

±30V

Rise Time :

27ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

170m Ω @ 500mA, 10V

Pulsed Drain Current-Max (IDM) :

90A

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Pbfree Code :

yes

Element Configuration :

Single

Power Dissipation (Max) :

540W (Tc)