IXFV36N50PS
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- Mfr.Part #
- IXFV36N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A PLUS-220SMD
- Stock
- 46,438
- In Stock ：
- 46,438
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Vgs (Max) :
- ±30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 90A
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Supplier Device Package :
- PLUS-220SMD
- Fall Time (Typ) :
- 21 ns
- Pin Count :
- 3
- Termination :
- SMD/SMT
- Terminal Form :
- Gull wing
- FET Feature :
- --
- Nominal Vgs :
- 5 V
- Product Status :
- Obsolete
- Number of Terminals :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Published :
- 2006
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Package / Case :
- PLUS-220SMD
- Drain to Source Voltage (Vdss) :
- 500V
- DS Breakdown Voltage-Min :
- 500 V
- Number of Pins :
- 220
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 36 A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.17Ohm
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 500V
- Dual Supply Voltage :
- 500V
- ECCN Code :
- EAR99
- Series :
- HiPerFET™, PolarP2™
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 540W
- Voltage - Rated DC :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 540 W
- Number of Terminations :
- 2
- Package Shape :
- RECTANGULAR
- Current Rating :
- 36A
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 540W (Tc)
- Power Dissipation-Max :
- 540W Tc
- RoHS Status :
- RoHS Compliant
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Package :
- Tube
- Continuous Drain Current (ID) :
- 36A
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXFV36
- Reverse Recovery Time :
- 200 ns
- Threshold Voltage :
- 5V
- Rise Time :
- 27ns
- Turn-Off Delay Time :
- 75 ns
- Datasheets
- IXFV36N50PS
N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 93nC @ 10V 500V PLUS-220SMD
IXFV36N50PS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 36 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 90A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFV36N50PS Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 90A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXFV36N50PS Applications
There are a lot of IXYS
IXFV36N50PS applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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