IXFV36N50P

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Mfr.Part #
IXFV36N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 500V 36A PLUS220
Stock
42,823
In Stock :
42,823

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
27ns
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
500V
Vgs(th) (Max) @ Id :
5V @ 4mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Continuous Drain Current (ID) :
36A
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Mount :
Through Hole
Series :
HiPerFET™, PolarP2™
Pbfree Code :
yes
Current Rating :
36A
Power Dissipation-Max :
540W Tc
Package / Case :
TO-220-3, Short Tab
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
500 V
RoHS Status :
RoHS Compliant
Power Dissipation (Max) :
540W (Tc)
Mounting Type :
Through Hole
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXFV36
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
500V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2006
Packaging :
Tube
Terminal Form :
THROUGH-HOLE
Vgs (Max) :
±30V
Drain-source On Resistance-Max :
0.17Ohm
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Product Status :
Obsolete
JESD-609 Code :
e1
Element Configuration :
Single
Number of Elements :
1
Surface Mount :
No
Power Dissipation :
540W
Pulsed Drain Current-Max (IDM) :
90A
Turn-Off Delay Time :
75 ns
Voltage - Rated DC :
500V
Pin Count :
3
Drain Current-Max (Abs) (ID) :
36 A
FET Feature :
--
Fall Time (Typ) :
21 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSIP-T3
Supplier Device Package :
PLUS220
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Manufacturer :
IXYS Corporation
Terminal Position :
Single
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Power Dissipation-Max (Abs) :
540 W
Avalanche Energy Rating (Eas) :
1500 mJ
Package :
Tube
Datasheets
IXFV36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV36N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Short Tab, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, IXFV36N50P pinout, IXFV36N50P datasheet PDF, IXFV36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFV36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 93nC @ 10V 500V TO-220-3, Short Tab

IXFV36N50P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5500pF @ 25V.This device conducts a continuous drain current (ID) of 36A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 36 A.When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 90A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFV36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 90A.
a 500V drain to source voltage (Vdss)


IXFV36N50P Applications


There are a lot of IXYS
IXFV36N50P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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