IXFV30N60PS
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- Mfr.Part #
- IXFV30N60PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A PLUS-220SMD
- Stock
- 31,421
- In Stock ：
- 31,421
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- FET Feature :
- --
- Base Product Number :
- IXFV30
- Pbfree Code :
- yes
- Manufacturer :
- IXYS Corporation
- Voltage - Rated DC :
- 600V
- Turn-Off Delay Time :
- 80 ns
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Power Dissipation (Max) :
- 500W (Tc)
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 30A
- Lead Free :
- Lead Free
- Published :
- 2006
- Package Shape :
- RECTANGULAR
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 500W
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Current Rating :
- 30A
- Supplier Device Package :
- PLUS-220SMD
- Drain-source On Resistance-Max :
- 0.24Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 20ns
- Product Status :
- Obsolete
- Number of Terminals :
- 2
- Power Dissipation-Max :
- 500W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- HiPerFET™, PolarHT™
- Drain to Source Breakdown Voltage :
- 600V
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 80A
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 600 V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Fall Time (Typ) :
- 25 ns
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- PLUS-220SMD
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Datasheets
- IXFV30N60PS
N-Channel Tube 240m Ω @ 15A, 10V ±30V 4000pF @ 25V 82nC @ 10V 600V PLUS-220SMD
IXFV30N60PS Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 4000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFV30N60PS Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFV30N60PS Applications
There are a lot of IXYS
IXFV30N60PS applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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