IXFV30N60P
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- Mfr.Part #
- IXFV30N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A PLUS220
- Stock
- 7,365
- In Stock ：
- 7,365
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS Corporation
- Vgs (Max) :
- ±30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3, Short Tab
- Gate to Source Voltage (Vgs) :
- 30V
- Surface Mount :
- No
- Pin Count :
- 3
- Power Dissipation :
- 500W
- Published :
- 2006
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 80A
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- PLUS220
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Drain-source On Resistance-Max :
- 0.24Ohm
- JESD-30 Code :
- R-PSIP-T3
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 80 ns
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- Current Rating :
- 30A
- Power Dissipation (Max) :
- 500W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- HiPerFET™, PolarHT™
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 600 V
- Package :
- Tube
- Continuous Drain Current (ID) :
- 30A
- Product Status :
- Obsolete
- Drain to Source Breakdown Voltage :
- 600V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Fall Time (Typ) :
- 25 ns
- Rise Time :
- 20ns
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Base Product Number :
- IXFV30
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Power Dissipation-Max :
- 500W Tc
- Datasheets
- IXFV30N60P
N-Channel Tube 240m Ω @ 15A, 10V ±30V 4000pF @ 25V 82nC @ 10V 600V TO-220-3, Short Tab
IXFV30N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4000pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFV30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFV30N60P Applications
There are a lot of IXYS
IXFV30N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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