IXFV30N50PS
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- Mfr.Part #
- IXFV30N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A PLUS-220SMD
- Stock
- 38,316
- In Stock ：
- 38,316
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, PolarHT™
- Power Dissipation :
- 460W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Rise Time :
- 24ns
- Surface Mount :
- yes
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 30A
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- PLUS-220SMD
- Qualification Status :
- Not Qualified
- Package / Case :
- PLUS-220SMD
- Gate to Source Voltage (Vgs) :
- 30V
- DS Breakdown Voltage-Min :
- 500 V
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Package :
- Tube
- Fall Time (Typ) :
- 24 ns
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Number of Terminals :
- 2
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 75A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 82 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Voltage - Rated DC :
- 500V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Terminal Form :
- Gull wing
- Base Product Number :
- IXFV30
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 0.2Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max :
- 460W Tc
- Power Dissipation (Max) :
- 460W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Published :
- 2006
- Package Shape :
- RECTANGULAR
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 2
- Current Rating :
- 30A
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Product Status :
- Obsolete
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 500V
- Datasheets
- IXFV30N50PS
N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V PLUS-220SMD
IXFV30N50PS Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 82 ns.Peak drain current for this device is 75A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFV30N50PS Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)
IXFV30N50PS Applications
There are a lot of IXYS
IXFV30N50PS applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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