IXFV30N50P
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- Mfr.Part #
- IXFV30N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A PLUS220
- Stock
- 3,058
- In Stock ：
- 3,058
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Current Rating :
- 30A
- Product Status :
- Obsolete
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 500 V
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation-Max :
- 460W Tc
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Terminal Form :
- THROUGH-HOLE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 82 ns
- Package / Case :
- TO-220-3, Short Tab
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Power Dissipation (Max) :
- 460W (Tc)
- Package Shape :
- RECTANGULAR
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 30A
- Number of Elements :
- 1
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Supplier Device Package :
- PLUS220
- Voltage - Rated DC :
- 500V
- Case Connection :
- DRAIN
- Rise Time :
- 24ns
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- --
- Base Product Number :
- IXFV30
- Drain-source On Resistance-Max :
- 0.2Ohm
- Power Dissipation :
- 460W
- Series :
- HiPerFET™, PolarHT™
- Manufacturer :
- IXYS Corporation
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 24 ns
- Pulsed Drain Current-Max (IDM) :
- 75A
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXFV30N50P
N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-220-3, Short Tab
IXFV30N50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 4150pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 82 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 75A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFV30N50P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)
IXFV30N50P Applications
There are a lot of IXYS
IXFV30N50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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