IXFV26N60PS
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- Mfr.Part #
- IXFV26N60PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A PLUS-220SMD
- Stock
- 8,292
- In Stock ：
- 8,292
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Obsolete
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 600V
- Series :
- PolarHV™
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXFV26
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 26A
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 65A
- Package Shape :
- RECTANGULAR
- Rise Time :
- 27ns
- Drain to Source Breakdown Voltage :
- 600V
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Turn-Off Delay Time :
- 75 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Current Rating :
- 26A
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.27Ohm
- Packaging :
- Tube
- Fall Time (Typ) :
- 21 ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 460W
- JESD-30 Code :
- R-PSSO-G2
- FET Feature :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminals :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Supplier Device Package :
- PLUS-220SMD
- Voltage - Rated DC :
- 600V
- Power Dissipation (Max) :
- 460W (Tc)
- Package / Case :
- PLUS-220SMD
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 460W Tc
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS Corporation
- Datasheets
- IXFV26N60PS
N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V PLUS-220SMD
IXFV26N60PS Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 26A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 65A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFV26N60PS Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)
IXFV26N60PS Applications
There are a lot of IXYS
IXFV26N60PS applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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