IXFV26N50PS
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- Mfr.Part #
- IXFV26N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A PLUS-220SMD
- Stock
- 1,423
- In Stock ：
- 1,423
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 400W (Tc)
- Package :
- Tube
- Published :
- 2006
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Product Status :
- Obsolete
- Power Dissipation :
- 400W
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS Corporation
- DS Breakdown Voltage-Min :
- 500 V
- Continuous Drain Current (ID) :
- 26A
- Surface Mount :
- yes
- Power Dissipation-Max :
- 400W Tc
- Packaging :
- Tube
- Package / Case :
- PLUS-220SMD
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- FET Feature :
- --
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.23 Ω
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Series :
- HiPerFET™, PolarHT™
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminals :
- 2
- Number of Terminations :
- 2
- Rise Time :
- 25ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Current Rating :
- 26A
- Threshold Voltage :
- 5.5V
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 20 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Turn-Off Delay Time :
- 58 ns
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 78A
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFV26
- Supplier Device Package :
- PLUS-220SMD
- Voltage - Rated DC :
- 500V
- Datasheets
- IXFV26N50PS
N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 60nC @ 10V 500V PLUS-220SMD
IXFV26N50PS Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 26A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 58 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 78A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5.5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFV26N50PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a threshold voltage of 5.5V
a 500V drain to source voltage (Vdss)
IXFV26N50PS Applications
There are a lot of IXYS
IXFV26N50PS applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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