IXFV26N50P
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- Mfr.Part #
- IXFV26N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A PLUS220
- Stock
- 48,100
- In Stock ：
- 48,100
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Surface Mount :
- No
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 500V
- FET Feature :
- --
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Power Dissipation-Max :
- 400W Tc
- Fall Time (Typ) :
- 20 ns
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS Corporation
- Rise Time :
- 25ns
- Current Rating :
- 26A
- Product Status :
- Obsolete
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Published :
- 2006
- Supplier Device Package :
- PLUS220
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Gate to Source Voltage (Vgs) :
- 30V
- Drain-source On Resistance-Max :
- 0.23 Ω
- Continuous Drain Current (ID) :
- 26A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminals :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 78A
- Power Dissipation :
- 400W
- Reach Compliance Code :
- Compliant
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Series :
- HiPerFET™, PolarHT™
- Turn-Off Delay Time :
- 58 ns
- Package Shape :
- RECTANGULAR
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFV26
- DS Breakdown Voltage-Min :
- 500 V
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Package / Case :
- TO-220-3, Short Tab
- FET Type :
- N-Channel
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 400W (Tc)
- Datasheets
- IXFV26N50P
N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 60nC @ 10V 500V TO-220-3, Short Tab
IXFV26N50P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3600pF @ 25V.This device conducts a continuous drain current (ID) of 26A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 78A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFV26N50P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXFV26N50P Applications
There are a lot of IXYS
IXFV26N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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