IXFV22N60PS
- Mfr.Part #
- IXFV22N60PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A PLUS-220SMD
- Stock
- 9,458
- In Stock :
- 9,458
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Product Status :
- Obsolete
- Voltage - Rated DC :
- 600V
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Mount :
- Surface Mount
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 60 ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Manufacturer :
- IXYS Corporation
- Drain to Source Voltage (Vdss) :
- 600V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 22A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.35 Ω
- RoHS Status :
- RoHS Compliant
- Series :
- HiPerFET™, PolarHT™
- Pin Count :
- 3
- Number of Pins :
- 3
- Base Product Number :
- IXFV22
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Single
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Rise Time :
- 20ns
- Fall Time (Typ) :
- 23 ns
- Current Rating :
- 22A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- PLUS-220SMD
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- JESD-30 Code :
- R-PSSO-G2
- Supplier Device Package :
- PLUS-220SMD
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 400W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- Terminal Form :
- Gull wing
- Number of Terminals :
- 2
- Pulsed Drain Current-Max (IDM) :
- 66A
- Power Dissipation (Max) :
- 400W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 400W
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Datasheets
- IXFV22N60PS
N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V PLUS-220SMD
IXFV22N60PS Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFV22N60PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)
IXFV22N60PS Applications
There are a lot of IXYS
IXFV22N60PS applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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