IXFV22N60PS

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Mfr.Part #
IXFV22N60PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 600V 22A PLUS-220SMD
Stock
9,458
In Stock :
9,458

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Product Status :
Obsolete
Voltage - Rated DC :
600V
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Mount :
Surface Mount
Published :
2006
Mounting Type :
Surface Mount
Turn-Off Delay Time :
60 ns
Avalanche Energy Rating (Eas) :
1000 mJ
Manufacturer :
IXYS Corporation
Drain to Source Voltage (Vdss) :
600V
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
22A
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
0.35 Ω
RoHS Status :
RoHS Compliant
Series :
HiPerFET™, PolarHT™
Pin Count :
3
Number of Pins :
3
Base Product Number :
IXFV22
Package Shape :
RECTANGULAR
Terminal Position :
Single
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Number of Terminations :
2
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
FET Type :
N-Channel
DS Breakdown Voltage-Min :
600 V
Rise Time :
20ns
Fall Time (Typ) :
23 ns
Current Rating :
22A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
yes
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Package / Case :
PLUS-220SMD
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
22A Tc
JESD-30 Code :
R-PSSO-G2
Supplier Device Package :
PLUS-220SMD
Number of Elements :
1
Lead Free :
Lead Free
Vgs (Max) :
±30V
Power Dissipation-Max :
400W Tc
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Terminal Form :
Gull wing
Number of Terminals :
2
Pulsed Drain Current-Max (IDM) :
66A
Power Dissipation (Max) :
400W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
400W
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
600V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Datasheets
IXFV22N60PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV22N60PS from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:2, Package / Case:PLUS-220SMD, Operating Temperature:-55°C~150°C TJ, IXFV22N60PS pinout, IXFV22N60PS datasheet PDF, IXFV22N60PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV22N60PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFV22N60PS


N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V PLUS-220SMD

IXFV22N60PS Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFV22N60PS Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)


IXFV22N60PS Applications


There are a lot of IXYS
IXFV22N60PS applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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