IXFV22N60P

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Mfr.Part #
IXFV22N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 600V 22A PLUS220
Stock
43,713
In Stock :
43,713

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS Corporation
Polarity/Channel Type :
N-Channel
Current Rating :
22A
Terminal Position :
Single
Rise Time :
20ns
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
600V
Base Product Number :
IXFV22
Number of Elements :
1
Power Dissipation (Max) :
400W (Tc)
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
66A
Pin Count :
3
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Fall Time (Typ) :
23 ns
Drain-source On Resistance-Max :
0.35 Ω
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
Vgs (Max) :
±30V
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
22A
Drain to Source Breakdown Voltage :
600V
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
3
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED
Mount :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
JESD-30 Code :
R-PSIP-T3
Voltage - Rated DC :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-220-3, Short Tab
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
30V
Lead Free :
Lead Free
Turn-Off Delay Time :
60 ns
Resistance :
350mOhm
Current - Continuous Drain (Id) @ 25°C :
22A Tc
FET Feature :
--
Series :
HiPerFET™, PolarHT™
RoHS Status :
RoHS Compliant
JESD-609 Code :
e1
Avalanche Energy Rating (Eas) :
1000 mJ
Power Dissipation :
400W
Number of Terminals :
3
Product Status :
Obsolete
Published :
2006
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
PLUS220
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
600 V
Case Connection :
DRAIN
Power Dissipation-Max :
400W Tc
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV22N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Short Tab, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFV22N60P pinout, IXFV22N60P datasheet PDF, IXFV22N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV22N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFV22N60P


N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V TO-220-3, Short Tab

IXFV22N60P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 66A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFV22N60P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)


IXFV22N60P Applications


There are a lot of IXYS
IXFV22N60P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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