IXFV22N60P
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- Mfr.Part #
- IXFV22N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A PLUS220
- Stock
- 43,713
- In Stock ：
- 43,713
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- PLUS220
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Published :
- 2006
- Power Dissipation-Max :
- 400W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Power Dissipation :
- 400W
- Mounting Type :
- Through Hole
- Current Rating :
- 22A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3, Short Tab
- JESD-609 Code :
- e1
- Turn-Off Delay Time :
- 60 ns
- FET Feature :
- --
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Tube
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 600 V
- Vgs (Max) :
- ±30V
- Rise Time :
- 20ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Base Product Number :
- IXFV22
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 600V
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSIP-T3
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Obsolete
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.35 Ω
- Manufacturer :
- IXYS Corporation
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 600V
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation (Max) :
- 400W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 23 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Resistance :
- 350mOhm
- Series :
- HiPerFET™, PolarHT™
- Pulsed Drain Current-Max (IDM) :
- 66A
- Continuous Drain Current (ID) :
- 22A
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- Reach Compliance Code :
- Compliant
- Qualification Status :
- Not Qualified
- Datasheets
- IXFV22N60P
N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V TO-220-3, Short Tab
IXFV22N60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 66A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFV22N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)
IXFV22N60P Applications
There are a lot of IXYS
IXFV22N60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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