IXFV22N50PS
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- Mfr.Part #
- IXFV22N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A PLUS-220SMD
- Stock
- 15,838
- In Stock ：
- 15,838
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2006
- Series :
- HiPerFET™, PolarHT™
- Power Dissipation (Max) :
- 350W (Tc)
- Power Dissipation :
- 350W
- Input Capacitance (Ciss) (Max) @ Vds :
- 2630pF @ 25V
- FET Type :
- N-Channel
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Current Rating :
- 22A
- Fall Time (Typ) :
- 21 ns
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Package / Case :
- PLUS-220SMD
- Mount :
- Surface Mount
- Power Dissipation-Max (Abs) :
- 350 W
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- DRAIN
- Rise Time :
- 25ns
- Drain Current-Max (Abs) (ID) :
- 22 A
- Base Product Number :
- IXFV22
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 55A
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 500 V
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- FET Feature :
- --
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- PLUS-220SMD
- Surface Mount :
- yes
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 2
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 500V
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 350W Tc
- Packaging :
- Tube
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 72 ns
- Voltage - Rated DC :
- 500V
- Manufacturer :
- IXYS Corporation
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Continuous Drain Current (ID) :
- 22A
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.27Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Obsolete
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 500V
- Datasheets
- IXFV22N50PS
N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V PLUS-220SMD
IXFV22N50PS Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2630pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 22 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 72 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 55A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFV22N50PS Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 55A.
a 500V drain to source voltage (Vdss)
IXFV22N50PS Applications
There are a lot of IXYS
IXFV22N50PS applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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