IXFV22N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3, Short Tab

Power Dissipation-Max (Abs) :

350 W

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

22 A

Series :

HiPerFET™, PolarHT™

Terminal Position :

Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

270m Ω @ 11A, 10V

Case Connection :

DRAIN

Rise Time :

25ns

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

750 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

21 ns

Lead Free :

Lead Free

FET Feature :

--

Product Status :

Obsolete

Package Shape :

RECTANGULAR

Packaging :

Tube

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

2630pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.27Ohm

Turn-Off Delay Time :

72 ns

Gate to Source Voltage (Vgs) :

30V

Base Product Number :

IXFV22

Drain to Source Breakdown Voltage :

500V

JESD-609 Code :

e1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

22A

Power Dissipation-Max :

350W Tc

Manufacturer :

IXYS Corporation

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Mount :

Through Hole

DS Breakdown Voltage-Min :

500 V

Published :

2006

Pulsed Drain Current-Max (IDM) :

55A

Supplier Device Package :

PLUS220

Element Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

500V

FET Type :

N-Channel

Power Dissipation (Max) :

350W (Tc)

Voltage - Rated DC :

500V

Reach Compliance Code :

Compliant

Number of Terminations :

3

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

RoHS Status :

RoHS Compliant

Terminal Form :

THROUGH-HOLE

Power Dissipation :

350W

Number of Terminals :

3

Package :

Tube

Transistor Element Material :

SILICON

Current Rating :

22A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel