IXFV20N80PS

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 4mA

Published :

2006

Drain to Source Voltage (Vdss) :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Power Dissipation-Max :

500W Tc

Manufacturer :

IXYS Corporation

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™, PolarHT™

Package Shape :

RECTANGULAR

Min Operating Temperature :

-55 °C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

Surface Mount :

yes

Power Dissipation (Max) :

500W (Tc)

Drain to Source Resistance :

520 mΩ

Drain-source On Resistance-Max :

0.52Ohm

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

800V

Terminal Position :

Single

Package :

Tube

Avalanche Energy Rating (Eas) :

1000 mJ

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Power Dissipation :

500W

Base Product Number :

IXFV20

Supplier Device Package :

PLUS-220SMD

Package / Case :

PLUS-220SMD

Packaging :

Tube

Max Operating Temperature :

150 °C

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

20A

Rds On (Max) @ Id, Vgs :

520m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4685pF @ 25V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Terminations :

2

Mounting Type :

Surface Mount

Input Capacitance :

4.685 nF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Status :

Obsolete

Rds On Max :

520 mΩ

Fall Time (Typ) :

24 ns

Gate to Source Voltage (Vgs) :

30V

Max Power Dissipation :

500 W

RoHS :

Compliant

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

800 V

Rise Time :

24ns

Number of Pins :

3

Number of Elements :

1

FET Feature :

--

Number of Terminals :

2

FET Type :

N-Channel

Turn-Off Delay Time :

85 ns