IXFV18N90PS

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

900V

Power Dissipation-Max (Abs) :

540 W

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

800 mJ

Number of Elements :

1

Terminal Form :

Gull wing

RoHS :

Compliant

Drain-source On Resistance-Max :

0.6Ohm

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

540W

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

600m Ω @ 500mA, 10V

Mounting Type :

Surface Mount

Series :

HiPerFET™, PolarP2™

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Drain to Source Resistance :

600 mΩ

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Published :

2011

Pulsed Drain Current-Max (IDM) :

36A

DS Breakdown Voltage-Min :

900 V

Manufacturer :

IXYS Corporation

Surface Mount :

yes

Transistor Application :

SWITCHING

Package / Case :

PLUS-220SMD

Transistor Element Material :

SILICON

Pbfree Code :

yes

Continuous Drain Current (ID) :

18A

Max Power Dissipation :

540 W

Vgs (Max) :

±30V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFV18

Supplier Device Package :

PLUS-220SMD

Product Status :

Obsolete

Min Operating Temperature :

-55 °C

Polarity/Channel Type :

N-Channel

Input Capacitance :

5.23 nF

Mount :

Surface Mount

Terminal Position :

Single

Rds On Max :

600 mΩ

Power Dissipation-Max :

540W Tc

Number of Terminations :

2

Element Configuration :

Single

Package :

Tube

Power Dissipation (Max) :

540W (Tc)

FET Type :

N-Channel

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

5230pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

18 A

FET Feature :

--

Number of Terminals :

2

Gate to Source Voltage (Vgs) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

900V

Max Operating Temperature :

150 °C

Drive Voltage (Max Rds On,Min Rds On) :

10V