IXBT6N170

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-268

Factory Lead Time :

24 Weeks

Terminal Position :

Single

Operating Temperature Range :

- 55 C to + 150 C

Pbfree Code :

yes

Gate Charge :

17nC

Turn On Time :

104 ns

Reverse Recovery Time (trr) :

1.08µs

Gate-Emitter Voltage-Max :

20V

Power Dissipation :

75W

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

12 A

Max Collector Current :

12A

Mounting Style :

SMD/SMT

Number of Elements :

1

Input Type :

Standard

Product Type :

IGBT Transistors

Pin Count :

4

Tradename :

BIMOSFET

Collector Emitter Saturation Voltage :

2.84V

Switching Energy :

--

Weight :

4.500005g

Brand :

IXYS

Number of Terminals :

2

Reach Compliance Code :

not_compliant

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

36A

Transistor Application :

POWER CONTROL

Power Dissipation-Max (Abs) :

75 W

JESD-30 Code :

R-PSSO-G2

Product Category :

IGBT Transistors

Maximum Operating Temperature :

+ 150 C

Turn Off Time-Nom (toff) :

700 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Number of Terminations :

2

Max Power Dissipation :

75W

Terminal Form :

Gull wing

Product Status :

Active

Surface Mount :

yes

Additional Feature :

LOW CONDUCTION LOSS

Qualification Status :

Not Qualified

Base Product Number :

IXBT6

Td (on/off) @ 25°C :

--

Operating Temperature :

-55°C~150°C TJ

Collector Current-Max (IC) :

12 A

Width :

14 mm

JEDEC-95 Code :

TO-268AA

Length :

16.05 mm

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

IGBT Type :

--

Series :

BIMOSFET™

Collector Emitter Breakdown Voltage :

1.7kV

Published :

2008

Height :

5.1 mm

Packaging :

Tube

Mounting Type :

Surface Mount

Reverse Recovery Time :

1.08 μs

Configuration :

Single

Manufacturer :

IXYS

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

Technology :

Si

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

1.7kV

Vce(on) (Max) @ Vge, Ic :

3.4V @ 15V, 6A

RoHS :

Details

Package Shape :

RECTANGULAR

Collector-Emitter Voltage-Max :

1700 V

Voltage - Collector Emitter Breakdown (Max) :

1700V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Minimum Operating Temperature :

- 55 C

Power - Max :

75W

Test Condition :

--

Gate-Emitter Thr Voltage-Max :

5.5V