IRLSL3036PBF
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- Mfr.Part #
- IRLSL3036PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 195A TO262
- Stock
- 12,865
- In Stock ：
- 12,865
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Factory Lead Time :
- 15 Weeks
- Turn On Delay Time :
- 66 ns
- Turn-Off Delay Time :
- 110 ns
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Series :
- HEXFET®
- Height :
- 9.652mm
- Resistance :
- 2.4MOhm
- Transistor Element Material :
- SILICON
- Width :
- 4.826mm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 11210pF @ 50V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 380W Tc
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 16V
- Power Dissipation :
- 380W
- Continuous Drain Current (ID) :
- 195A
- Rise Time :
- 220ns
- Length :
- 10.668mm
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 165A, 10V
- Drain to Source Breakdown Voltage :
- 60V
- Drain Current-Max (Abs) (ID) :
- 270A
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±16V
- Fall Time (Typ) :
- 110 ns
- Element Configuration :
- Single
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Datasheets
- IRLSL3036PBF
N-Channel Tube 2.4m Ω @ 165A, 10V ±16V 11210pF @ 50V 140nC @ 4.5V TO-262-3 Long Leads, I2Pak, TO-262AA
IRLSL3036PBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 11210pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 270A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 66 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRLSL3036PBF Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 110 ns
IRLSL3036PBF Applications
There are a lot of Infineon Technologies
IRLSL3036PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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