IRLS3036PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

110 ns

Terminal Form :

Gull wing

Turn On Delay Time :

66 ns

JESD-609 Code :

e3

Lead Free :

Lead Free

Length :

10.67mm

Resistance :

2.4MOhm

Termination :

SMD/SMT

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

270A

Series :

HEXFET®

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Width :

9.65mm

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Threshold Voltage :

2.5V

Avalanche Energy Rating (Eas) :

290 mJ

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Dual Supply Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nominal Vgs :

2.5 V

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Case Connection :

DRAIN

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

11210pF @ 50V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 165A, 10V

Height :

4.83mm

Power Dissipation-Max :

380W Tc

Power Dissipation :

380W

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Fall Time (Typ) :

110 ns

Vgs (Max) :

±16V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

16V

Rise Time :

220ns

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Number of Elements :

1