IRLS3034-7PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Drain to Source Breakdown Voltage :

40V

Turn On Delay Time :

71 ns

Mounting Type :

Surface Mount

Power Dissipation :

380W

Element Configuration :

Single

Length :

10.668mm

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain Current-Max (Abs) (ID) :

240A

Published :

2006

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

7

Vgs (Max) :

±20V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

1540A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Input Capacitance (Ciss) (Max) @ Vds :

10990pF @ 40V

JESD-30 Code :

R-PSSO-G6

Threshold Voltage :

2.5V

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

590ns

REACH SVHC :

No SVHC

Resistance :

1.4mOhm

Power Dissipation-Max :

380W Tc

Fall Time (Typ) :

200 ns

Series :

HEXFET®

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

94 ns

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 4.5V

Height :

4.699mm

Continuous Drain Current (ID) :

380A

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Case Connection :

DRAIN

Packaging :

Tube

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 200A, 10V

Avalanche Energy Rating (Eas) :

250 mJ

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE