IRLS3036TRRPBF
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- Mfr.Part #
- IRLS3036TRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 195A D2PAK
- Stock
- 7,131
- In Stock ：
- 7,131
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 175°C
- Published :
- 2008
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 380W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 220ns
- Power Dissipation :
- 380W
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±16V
- Continuous Drain Current (ID) :
- 195A
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance :
- 11.21nF
- Rds On (Max) @ Id, Vgs :
- 2.4mOhm @ 165A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 11210pF @ 50V
- Drain to Source Breakdown Voltage :
- 60V
- Turn On Delay Time :
- 66 ns
- Turn-Off Delay Time :
- 110 ns
- Supplier Device Package :
- D2PAK
- Height :
- 4.826mm
- Width :
- 9.65mm
- Drain to Source Resistance :
- 2.4MOhm
- Gate to Source Voltage (Vgs) :
- 16V
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 4.5V
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 110 ns
- Rds On Max :
- 2.4 mΩ
- Length :
- 10.668mm
- Datasheets
- IRLS3036TRRPBF
N-Channel Tape & Reel (TR) 2.4mOhm @ 165A, 10V ±16V 11210pF @ 50V 140nC @ 4.5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLS3036TRRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11210pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 195A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.This device has a drain-to-source resistance of 2.4mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 66 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRLS3036TRRPBF Features
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 2.4mOhm
a 60V drain to source voltage (Vdss)
IRLS3036TRRPBF Applications
There are a lot of Infineon Technologies
IRLS3036TRRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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