IRLS3036TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

2.5 V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Width :

9.652mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±16V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

16V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Power Dissipation :

380W

Peak Reflow Temperature (Cel) :

260

Length :

10.668mm

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

11210pF @ 50V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

Rise Time :

220ns

Contact Plating :

Tin

Turn-Off Delay Time :

110 ns

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 165A, 10V

JESD-609 Code :

e3

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

290 mJ

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Fall Time (Typ) :

110 ns

Mount :

Surface Mount

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Published :

2005

Case Connection :

DRAIN

Number of Elements :

1

Continuous Drain Current (ID) :

270A

Threshold Voltage :

2.5V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Turn On Delay Time :

66 ns

Height :

4.826mm

Resistance :

1.9mOhm

Terminal Form :

Gull wing

Power Dissipation-Max :

380W Tc