IRLS3813PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.35V @ 150μA

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

195W Tc

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

Number of Channels :

1

Weight :

3.949996g

Resistance :

1.95Ohm

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1.95m Ω @ 148A, 10V

Mount :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

33 ns

Terminal Form :

Gull wing

Element Configuration :

Single

Rise Time :

202ns

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 4.5V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

160A

Case Connection :

DRAIN

Fall Time (Typ) :

102 ns

Input Capacitance (Ciss) (Max) @ Vds :

8020pF @ 25V

Series :

HEXFET®

Mounting Type :

Surface Mount

Number of Terminations :

2

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

32 ns

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

850A

Current - Continuous Drain (Id) @ 25°C :

160A Tc

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube