IRLS3034TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.572mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Length :

10.668mm

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 195A, 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Published :

2009

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Width :

9.65mm

Input Capacitance (Ciss) (Max) @ Vds :

10315pF @ 25V

Factory Lead Time :

12 Weeks

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

65 ns

Continuous Drain Current (ID) :

195A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

40V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

255 mJ

Fall Time (Typ) :

355 ns

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

827ns

Power Dissipation-Max :

375W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 4.5V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Power Dissipation :

375W

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0017Ohm

Terminal Form :

Gull wing

Turn-Off Delay Time :

97 ns

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE