IRLSL3034PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Turn On Delay Time :

65 ns

Drain to Source Resistance :

1.7MOhm

Power Dissipation :

375W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

355 ns

Current - Continuous Drain (Id) @ 25°C :

195A Tc

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Continuous Drain Current (ID) :

195A

Published :

2009

Mounting Type :

Through Hole

Number of Elements :

1

Input Capacitance :

10.315nF

Vgs (Max) :

±20V

Power Dissipation-Max :

375W Tc

Length :

10.668mm

Rise Time :

827ns

Turn-Off Delay Time :

97 ns

Packaging :

Tube

Supplier Device Package :

TO-262

Height :

9.65mm

Operating Temperature :

-55°C~175°C TJ

Width :

4.826mm

Drain to Source Voltage (Vdss) :

40V

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

10315pF @ 25V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.7mOhm @ 195A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Max Operating Temperature :

175°C

Mount :

Through Hole

Series :

HEXFET®

Rds On Max :

1.7 mΩ

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Element Configuration :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA