IRLS640A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

40W Tc

FET Type :

N-Channel

Number of Pins :

3

Factory Lead Time :

9 Weeks

Voltage - Rated DC :

200V

Drain to Source Breakdown Voltage :

200V

Packaging :

Tube

Turn On Delay Time :

11 ns

Current - Continuous Drain (Id) @ 25°C :

9.8A Tc

Number of Elements :

1

Current Rating :

9.8A

Input Capacitance (Ciss) (Max) @ Vds :

1705pF @ 25V

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V

Mount :

Through Hole

Radiation Hardening :

No

Turn-Off Delay Time :

46 ns

Vgs (Max) :

±20V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Rise Time :

8ns

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

64 mJ

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

40W

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

180m Ω @ 4.9A, 5V

Continuous Drain Current (ID) :

9.8A

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Terminations :

3

Transistor Application :

SWITCHING

Weight :

2.27g