IRLS4030TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Power Dissipation-Max :

370W Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

2.5 V

Published :

2009

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

180A

Transistor Element Material :

SILICON

Mount :

Surface Mount

Series :

HEXFET®

Resistance :

3.9MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

11360pF @ 50V

Number of Elements :

1

Turn On Delay Time :

74 ns

ECCN Code :

EAR99

Radiation Hardening :

No

Rise Time :

330ns

Number of Terminations :

2

Turn-Off Delay Time :

110 ns

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

Power Dissipation :

370W

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 110A, 10V

Height :

4.572mm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 4.5V

Width :

9.65mm

Gate to Source Voltage (Vgs) :

16V

Length :

10.668mm

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

170 ns