IRLS4030PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Number of Pins :

3

Length :

10.668mm

Width :

9.65mm

Published :

2009

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Fall Time (Typ) :

170 ns

Number of Terminations :

2

Termination :

SMD/SMT

Resistance :

4.3mOhm

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 110A, 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Series :

HEXFET®

Turn On Delay Time :

74 ns

Dual Supply Voltage :

100V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Threshold Voltage :

2.5V

Nominal Vgs :

2.5 V

Height :

4.572mm

Gate to Source Voltage (Vgs) :

16V

Power Dissipation :

370W

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JESD-609 Code :

e3

Turn-Off Delay Time :

110 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Rise Time :

330ns

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

190A

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Power Dissipation-Max :

370W Tc

Input Capacitance (Ciss) (Max) @ Vds :

11360pF @ 50V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mount :

Surface Mount

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 4.5V

Vgs (Max) :

±16V

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V