IRLR7807ZTRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

43A

Turn-Off Delay Time :

9.8 ns

Width :

6.22mm

Element Configuration :

Single

Number of Elements :

1

Number of Pins :

3

Radiation Hardening :

No

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 15V

Threshold Voltage :

1.8V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Power Dissipation-Max :

40W Tc

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

3.5 ns

Power Dissipation :

40W

Voltage - Rated DC :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Mount :

Surface Mount

FET Type :

N-Channel

Resistance :

13.8mOhm

Vgs (Max) :

±20V

Length :

6.7056mm

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

7.1 ns

Rds On (Max) @ Id, Vgs :

13.8m Ω @ 15A, 10V

REACH SVHC :

No SVHC

Nominal Vgs :

1.8 V

Number of Terminations :

2

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

43A

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Recovery Time :

35 ns

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Height :

2.26mm

Factory Lead Time :

12 Weeks

Lead Free :

Contains Lead, Lead Free

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

28 mJ

Published :

2004

Rise Time :

28ns