IRLR014NTRPBF
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- Mfr.Part #
- IRLR014NTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 10A DPAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 47ns
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 7.9nC @ 5V
- Turn On Delay Time :
- 6.5 ns
- RoHS Status :
- RoHS Compliant
- Resistance :
- 140mOhm
- Turn-Off Delay Time :
- 12 ns
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±16V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- D-Pak
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Input Capacitance :
- 265pF
- Drain to Source Voltage (Vdss) :
- 55V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 265pF @ 25V
- Fall Time (Typ) :
- 23 ns
- Power Dissipation :
- 28W
- Rds On (Max) @ Id, Vgs :
- 140mOhm @ 6A, 10V
- Published :
- 2004
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 55V
- Power Dissipation-Max :
- 28W Tc
- Series :
- HEXFET®
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 16V
- Rds On Max :
- 140 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Max Operating Temperature :
- 175°C
- Drain to Source Resistance :
- 140mOhm
- Continuous Drain Current (ID) :
- 10A
- Datasheets
- IRLR014NTRPBF
N-Channel Tape & Reel (TR) 140mOhm @ 6A, 10V ±16V 265pF @ 25V 7.9nC @ 5V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR014NTRPBF Overview
A device's maximum input capacitance is 265pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 12 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 140mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRLR014NTRPBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 140mOhm
a 55V drain to source voltage (Vdss)
IRLR014NTRPBF Applications
There are a lot of Infineon Technologies
IRLR014NTRPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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