IRLR014TR
- Mfr.Part #
- IRLR014TR
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.7A DPAK
- Stock
- 4,616
- In Stock :
- 4,616
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 21 Weeks
- Pbfree Code :
- No
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 60V
- Rise Time :
- 110ns
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 10V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 17 ns
- Published :
- 2016
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Avalanche Energy Rating (Eas) :
- 27.4 mJ
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 240
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- TIN LEAD
- DS Breakdown Voltage-Min :
- 60V
- Fall Time (Typ) :
- 26 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 9.3 ns
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 4.6A, 5V
- JESD-609 Code :
- e0
- Drain-source On Resistance-Max :
- 0.2Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Continuous Drain Current (ID) :
- 7.7A
- Datasheets
- IRLR014TR
N-Channel Tape & Reel (TR) 200m Ω @ 4.6A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR014TR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 27.4 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 17 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 5V).
IRLR014TR Features
the avalanche energy rating (Eas) is 27.4 mJ
a continuous drain current (ID) of 7.7A
the turn-off delay time is 17 ns
a 60V drain to source voltage (Vdss)
IRLR014TR Applications
There are a lot of Vishay Siliconix
IRLR014TR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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