IRLR014
- Mfr.Part #
- IRLR014
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.7A DPAK
- Stock
- 41,089
- In Stock :
- 41,089
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Rds On Max :
- 200 mΩ
- Fall Time (Typ) :
- 26 ns
- Packaging :
- Tube
- Turn-Off Delay Time :
- 17 ns
- Vgs (Max) :
- ±10V
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- Factory Lead Time :
- 18 Weeks
- Mounting Type :
- Surface Mount
- REACH SVHC :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Published :
- 2015
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Rise Time :
- 110ns
- Drain to Source Voltage (Vdss) :
- 60V
- Gate to Source Voltage (Vgs) :
- 10V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Turn On Delay Time :
- 9.3 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Continuous Drain Current (ID) :
- 7.7A
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- FET Type :
- N-Channel
- Nominal Vgs :
- 2 V
- Supplier Device Package :
- D-Pak
- Input Capacitance :
- 400pF
- Drain to Source Resistance :
- 200mOhm
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 4.6A, 5V
- Radiation Hardening :
- No
- Datasheets
- IRLR014
N-Channel Tube 200mOhm @ 4.6A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR014 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 400pF @ 25V.This device conducts a continuous drain current (ID) of 7.7A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 17 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 200mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLR014 Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRLR014 Applications
There are a lot of Vishay Siliconix
IRLR014 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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