IRLR014NPBF
- Mfr.Part #
- IRLR014NPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 10A DPAK
- Stock
- 21,547
- In Stock :
- 21,547
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 12 ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Number of Pins :
- 4
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate to Source Voltage (Vgs) :
- 16V
- Voltage - Rated DC :
- 55V
- REACH SVHC :
- No SVHC
- Min Operating Temperature :
- -55°C
- Dual Supply Voltage :
- 55V
- Series :
- HEXFET®
- Vgs (Max) :
- ±16V
- Drain to Source Breakdown Voltage :
- 55V
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- D-Pak
- Rds On (Max) @ Id, Vgs :
- 140mOhm @ 6A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 265pF @ 25V
- Rds On Max :
- 140 mΩ
- Current Rating :
- 10A
- Threshold Voltage :
- 1V
- Fall Time (Typ) :
- 23 ns
- Resistance :
- 140mOhm
- Lead Free :
- Lead Free
- Drain to Source Resistance :
- 140mOhm
- Drain to Source Voltage (Vdss) :
- 55V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 7.9nC @ 5V
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Power Dissipation :
- 28W
- Rise Time :
- 47ns
- Nominal Vgs :
- 1 V
- Turn On Delay Time :
- 6.5 ns
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2004
- Input Capacitance :
- 265pF
- Packaging :
- Tube
- Power Dissipation-Max :
- 28W Tc
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 10A
- Max Operating Temperature :
- 175°C
- Number of Elements :
- 1
- Datasheets
- IRLR014NPBF

N-Channel Tube 140mOhm @ 6A, 10V ±16V 265pF @ 25V 7.9nC @ 5V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR014NPBF Description
IRLR014NPBF is a 55v HEXFET? Power MOSFET. The Fifth Generation HEXFET IRLR014NPBF from International Rectifier utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
IRLR014NPBF Features
-
Logic-Level Gate Drive
-
Surface Mount (IRLR024N)
-
Straight Lead (IRLU024N)
-
Advanced Process Technology
-
Fast Switching
-
Fully Avalanche Rated
IRLR014NPBF Applications
-
DC motor drive
-
High-efficiency synchronous rectification in SMPS
-
Uninterruptible power supply
-
High-speed power switching
-
Hard switched and high-frequency circuits
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