IRLR014NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

47ns

Threshold Voltage :

1V

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

140mOhm @ 6A, 10V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

16V

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tube

Turn-Off Delay Time :

12 ns

Supplier Device Package :

D-Pak

Element Configuration :

Single

Number of Pins :

4

Dual Supply Voltage :

55V

Power Dissipation :

28W

Fall Time (Typ) :

23 ns

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance :

265pF

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Power Dissipation-Max :

28W Tc

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

10A

Resistance :

140mOhm

Drain to Source Breakdown Voltage :

55V

Turn On Delay Time :

6.5 ns

Max Operating Temperature :

175°C

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

265pF @ 25V

Vgs(th) (Max) @ Id :

1V @ 250μA

Current Rating :

10A

Rds On Max :

140 mΩ

Mount :

Surface Mount

Voltage - Rated DC :

55V

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

140mOhm

Nominal Vgs :

1 V

Min Operating Temperature :

-55°C

Vgs (Max) :

±16V