IRLR014TRL
- Mfr.Part #
- IRLR014TRL
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.7A DPAK
- Stock
- 11,830
- In Stock :
- 11,830
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- JESD-30 Code :
- R-PSSO-G2
- Drain-source On Resistance-Max :
- 0.2Ohm
- HTS Code :
- 8541.29.00.95
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 4.6A, 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- Pbfree Code :
- No
- Factory Lead Time :
- 21 Weeks
- Drain to Source Breakdown Voltage :
- 60V
- Published :
- 2016
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Turn-Off Delay Time :
- 17 ns
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- Continuous Drain Current (ID) :
- 7.7A
- Peak Reflow Temperature (Cel) :
- 240
- Fall Time (Typ) :
- 26 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Surface Mount
- Terminal Finish :
- TIN LEAD
- Rise Time :
- 110ns
- Vgs (Max) :
- ±10V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Turn On Delay Time :
- 9.3 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- RoHS Status :
- Non-RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 27.4 mJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Datasheets
- IRLR014TRL
N-Channel Tape & Reel (TR) 200m Ω @ 4.6A, 5V ±10V 400pF @ 25V 8.4nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR014TRL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 27.4 mJ.The maximum input capacitance of this device is 400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.7A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 17 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4V 5V), this device helps reduce its power consumption.
IRLR014TRL Features
the avalanche energy rating (Eas) is 27.4 mJ
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
IRLR014TRL Applications
There are a lot of Vishay Siliconix
IRLR014TRL applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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