IRLL3303TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

4.6A

Recovery Time :

98 ns

Resistance :

31mOhm

Turn On Delay Time :

7.2 ns

Rds On (Max) @ Id, Vgs :

31m Ω @ 4.6A, 10V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Power Dissipation :

2.1W

Time@Peak Reflow Temperature-Max (s) :

30

Width :

3.7mm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.8mm

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

30V

Threshold Voltage :

1V

Vgs(th) (Max) @ Id :

1V @ 250μA

Vgs (Max) :

±16V

Package / Case :

TO-261-4, TO-261AA

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

JESD-609 Code :

e3

FET Type :

N-Channel

Length :

6.6802mm

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Case Connection :

DRAIN

Dual Supply Voltage :

30V

Element Configuration :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Terminal Form :

Gull wing

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

16V

JESD-30 Code :

R-PDSO-G4

Number of Pins :

3

Turn-Off Delay Time :

33 ns

Power Dissipation-Max :

1W Ta

Drain to Source Breakdown Voltage :

30V

Nominal Vgs :

1 V

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

4.6A

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

6.5A

Published :

1999

Rise Time :

22ns

Number of Terminations :

4

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

28 ns

Mount :

Surface Mount

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

Series :

HEXFET®