IRLL3303TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.031Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

Transistor Application :

SWITCHING

Package / Case :

TO-261-4, TO-261AA

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Avalanche Energy Rating (Eas) :

140 mJ

Series :

HEXFET®

JESD-30 Code :

R-PDSO-G4

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

4.6A

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

31m Ω @ 4.6A, 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Mounting Type :

Surface Mount

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

37A

Power Dissipation-Max :

1W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

Published :

1999

Vgs (Max) :

±16V

DS Breakdown Voltage-Min :

30V

Terminal Position :

Dual

Qualification Status :

Not Qualified

ECCN Code :

EAR99