IRLL3303

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1V @ 250μA

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

1W Ta

Configuration :

Single

Drain Current-Max (Abs) (ID) :

6.5A

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4

Rds On (Max) @ Id, Vgs :

31m Ω @ 4.6A, 10V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

Vgs (Max) :

±16V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e0

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.031Ohm

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Series :

HEXFET®

Packaging :

Tube

Number of Terminations :

4

DS Breakdown Voltage-Min :

30V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-261-4, TO-261AA

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Lead (Sn/Pb)

FET Type :

N-Channel

Surface Mount :

yes

Published :

1999

Peak Reflow Temperature (Cel) :

245

ECCN Code :

EAR99