IRLL2705TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Current Rating :

3.8A

Power Dissipation-Max :

1W Ta

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Number of Pins :

3

ECCN Code :

EAR99

Vgs (Max) :

±16V

JESD-30 Code :

R-PDSO-G4

Terminal Position :

Dual

Nominal Vgs :

2 V

Published :

1997

Drain Current-Max (Abs) (ID) :

5.2A

Mount :

Surface Mount

Recovery Time :

88 ns

Turn On Delay Time :

6.2 ns

Height :

1.8mm

Mounting Type :

Surface Mount

Number of Channels :

1

Length :

6.6802mm

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.7mm

Dual Supply Voltage :

55V

Turn-Off Delay Time :

35 ns

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Gate to Source Voltage (Vgs) :

16V

Rds On (Max) @ Id, Vgs :

40m Ω @ 3.8A, 10V

Radiation Hardening :

No

Rise Time :

12ns

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

55V

Number of Elements :

1

Transistor Element Material :

SILICON

Element Configuration :

Single

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

TO-261-4, TO-261AA

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2.1W

Voltage - Rated DC :

55V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Continuous Drain Current (ID) :

3.8A

Threshold Voltage :

2V

Resistance :

40mOhm

Fall Time (Typ) :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3